LB123D discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor pinning 1 = emitter 2 = collector 3 = base description designed for high voltage, high speed switching circuits, and amplifier applications . characteristic symbol rating unit collector-base voltage vcbo 600 v collector-emitter voltage vceo 400 v emitter-base voltage vebo 8 v collector current(dc) ic 1 a collector current(pluse) ic 2 a total power dissipation(t c=25oc) pd 30 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo 600 - - v ic=1ma, ie=0 collector-emitter breakdown voltage bvceo 400 - - v ic=10ma, ib=0 emitter-base breakdown volatge bvebo 8 - - v ie=1ma, ic=0 collector cutoff current icbo - - 10 ma vcb =600v, ie=0 emitter cutoff current iebo - - 10 ma vbe =9v, ic=0 collector-emitter saturation voltage (1) vce(sat)1 - - 0.8 v ic=0.1a, ib=10ma vce(sat)2 - - 0.9 v ic=0.3a, ib=30ma base-emitter saturation voltage (1) vbe(sat)1 - - 1.2 v ic=0.1a, ib=10ma vbe(sat)2 - - 1.8 v ic=0.3a, ib=30ma hfe1 10 - 50 - ic=0.3a, vce=5v dc current gain(1) hfe2 10 - - - ic=0.5a, vce=5v hfe3 6 - - - ic=1a, vce=5v electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% rank b1 b2 b3 b4 b5 b6 b7 b8 range 10~17 13~22 18~27 23~32 28~37 33~42 38~47 43~50 classification of hfe1 to-126ml dimensions in inches and (millimeters) .090 (2.28) .123(3.12) .113(2.87) .084(2.14).074(1.88) .033(0.84).027(0.68) .163(4.12).153(3.87) .044(1.12).034(0.87) .060(1.52).050(1.27) .084(2.12).074(1.87) .591(15.0).551(14.0) .300(7.62).290(7.37) .148(3.75).138(3.50) .056(1.42).046(1.17) .180 (4.56) typ .146(3.70).136(3.44) .027(0.69).017(0.43) typ 1 2 3
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